Scaling up of terahertz energies based on semiconductor sources and optimization of THz detection techniques

2019. június 03., 17:44

PTE TTK Fizikai Intézet és a PAB meghívja Nelson M. Mbithi (PTE) "Scaling up of terahertz energies based on semiconductor sources and optimization of THz detection techniques" című előadására.

Helyszín: PTE TTK E/417. előadóterem
Időpont: 2019. 06. 11. (kedd) 14:00

Abstract:

Intense in low (0.1-2 THz) and mid (2-20 THz) frequencies part of the THz spectrum, have enabled the development of new compact particle and x-ray sources for technological and scientific applications. A scalable high energy THz pulse based on optical rectification of femtosecond laser pulses utilizing semiconductor (GaP) contact grating, pumped at 1.76 um, 2.06 um and 2.2 um wavelength to surpres two-and three photon absorption is proposed. Diffraction efficiencies as high as 80% have been achieved with binary CG profile, which are increased to 90% by addition of antireflective coating. Therefore, use contact-grating source is feasible for scaling THz pulse energy to mJ level.

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